ASMC致力于提供竞争力的中国产的宽带隙半导体材料。
我们专注于高质量氮化镓半导体单晶材料的生长。氮化镓是第三代半导体的代表，它是节能照明、激光投影显示、智能电网、新能源汽车、5G通信等产业的核心基础材料，预计到2020年将形成万亿美元以上的市场规模。
另外我们还有如下低位错、高质量的宽禁带材料:
氮化镓单晶，氮化镓外延片，定制化外延片（PIN/SBD/HEMT/MOS/LED）；
氮化铝单晶，氮化铝外延片；
碳化硅半绝缘衬底;
金刚石单晶
欢迎海内外业内人士咨询!
2英寸氮化镓自支撑晶片
2 inch Free-Standing GaN Substrates
性能参数Specifications:
| 产品型号Item
|
GaN-FS-C-U-C50
|
GaN-FS-C-N-C50
|
GaN-FS-C-SI-C50
|
|
尺寸Dimensions
|
Ф 50.8 mm ± 1 mm
| ||
|
厚度Thickness
|
350 ± 25 μm
| ||
|
有效面积Useable Surface Area
|
> 90%
| ||
|
晶体取向Orientation
|
C-plane (0001) off angle toward M-Axis 0.35°± 0.15°
| ||
|
主定位边Orientation Flat
|
(1-100) ± 0.5°, 16.0 ± 1.0 mm
| ||
|
次定位边Secondary Orientation Flat
|
(11-20) ± 3°, 8.0 ± 1.0 mm
| ||
|
TTV(Total Thickness Variation)
|
≤ 15 μm
| ||
|
弯曲度BOW
|
≤ 20 μm
| ||
|
导电类型Conduction Type
|
N-type
|
N-type
|
Semi-Insulating (Fe-doped)
|
|
电阻率Resistivity(300K)
|
< 0.1 Ω·cm
|
< 0.05 Ω·cm
|
>106 Ω·cm
|
|
位错密度Dislocation Density
|
From 1x105 cm-2 to 3x106 cm-2
| ||
|
抛光Polishing
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Front Surface: Ra < 0.2 nm (polished); or < 0.3 nm (polished and surface treatment for epitaxy)
| ||
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Back Surface: 0.5~1.5 μm; option: 1~3 nm (fine ground); < 0.2 nm (polished)
| |||
|
包装Package
|
Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.
| ||
18006360823