联系人：萧先生
邮箱：josephxiao413@163.com
电话：19925424813
地址： 广东深圳市福田区新亚洲国利大厦2007
| 品牌 |
ON/安森美 |
型号 |
NCV51561BBDWR2G |
| 封装形式 |
SMD |
数量 |
10000 |
| 封装 |
SOIC16 |
|
The NCV51561 are isolated dual-channel gate drivers with 4.5-A/9-A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCV51561 offers short and matched propagation delays. Two independent and 5 kVRMS (UL1577 rating) galvanically isolated gate driver channels can be used in any possible configurations of two low side, two high-side switches or a half-bridge driver with programmable dead time. An enable pin shutdown both outputs simultaneously when is set low. The NCV51561 offers other important protection functions such as independent under-voltage lockout for both gate drivers and enable function.
| Features | Benefits | ||||
|---|---|---|---|---|---|
| 4.5-A Peak Source, 9-A Peak Sink Output Current Capability
|
Improve efficiency and allow direct drive of high power switches
| ||||
|
Output Supply Voltage from 6.5 V to 30 V with 5-V, 8-V, and 17-V UVLO threshold.
|
Offer proper protections for both MOSFET's and SiC FET
| ||||
|
Propagation Delay Typical 36 ns with 8 ns Max Delay Matching per channel
|
Very good signal integrity and fit with fast switching speed applications
| ||||
|
User Programmable Input Logic for Single or Dual-input modes via ANB
|
Offer flexibility in design and topologies
| ||||
|
Common Mode Transient Immunity CMTI > 200V/ns
|
Improved robustness in fast slew rate high voltage and high current switching applications
| ||||
|
5 kVRMS Galvanic Isolation from input to each output & 1500 V peak differential voltage between output channels
|
Provide safety and protection in applications requiring high isolation level
|
| Applications | End Products | |
|---|---|---|
| Electrical Vehicles EV Charging Stations
|
High Power DC/DC converters On Board Chargers Traction Inverters AC and DC powered Charging Stations
|
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