High Side and Low Side Gate Driver NCV51511PDR2G

　　The NCV51511 is high side and low side gate-drive IC designed for high voltage, high-speed, driving MOSFETs operating up to 80 V. The NCV51511 integrates a driver IC and a bootstrap diode. The driver IC features low delay time and matched PWM input propagation delays, which further enhance the performance of the part. The high speed dual gate driver are designed to drive both the high-side and low-side of N-Channel MOSFETs in a half bridge or synchronous buck configuration. The floating high-side driver is capable of operating with supply voltages of up to 80 V. In the dual gate driver, the high side and low side each have independent inputs which allow maximum flexibility of input control signals in the application. The PWM input signal (high level) can be 3.3 V, 5 V or up to VDD logic input to cover all possible applications.