联系人：萧先生
邮箱：josephxiao413@163.com
电话：19925424813
地址： 广东深圳市福田区新亚洲国利大厦2007
| 品牌 |
ON/安森美 |
型号 |
NCP51810AMNTWG |
| 封装形式 |
SMD |
数量 |
10000 |
| 封装 |
QFN15 |
|
The NCP51810 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e?mode) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51810 offers short and matched propagation delays as well as ?3.5 V to +150 V (typical) common-mode voltage range for the high?side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51810 offers important protection functions such as independent under?voltage lockout (UVLO) and IC thermal shutdown.
| Features | Benefits | ||||
|---|---|---|---|---|---|
| 150 V, high side and low side gate driver
|
Support 48 V input design with sufficient safety margin
| ||||
|
Fast propagation delay of 50 ns max
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Suitable for high frequency operation
| ||||
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Fast propagation delay of 50 ns max
|
Increased efficiency and allow paralleling
| ||||
|
200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry
|
Robust design for high switching frequency application
| ||||
|
Separate source and sink output pin
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Allow control of rise and fall time for EMI tuning
| ||||
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Regulated 5.2 V gate driver with independent UVLO for high side and low side output stages
|
Optimum driving of GaN power switches and simplify design
| ||||
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QFN 4 mm x 4 mm 15 pin packaging and optimized pin out
|
Small PCB foot print, reduced parasitic, suitable for high frequency operation
|
| Applications | End Products | |
|---|---|---|
| Resonant converters Half bridge and full bridge converters Active clamp flyback converters Non isolated step down converters
|
Data center 48 V to low voltage intermediate bus converter 48 V to PoL converter Industrial power module
|
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