联系人：萧先生
邮箱：josephxiao413@163.com
电话：19925424813
地址： 广东深圳市福田区新亚洲国利大厦2007
| 品牌 |
ON/安森美 |
型号 |
MC33153DR2G |
| 封装形式 |
SMD |
数量 |
10000 |
| 封装 |
SOIC8 |
|
The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dual-in-line and surface mount packages and include the following features:
| Features | |
|---|---|
| High Current Output Stage: 1.0 A Source/2.0 A Sink
| |
|
Protection Circuits for Both Conventional and Sense IGBTs
| |
|
Programmable Fault Blanking Time
| |
|
Protection against Overcurrent and Short Circuit
| |
|
Undervoltage Lockout Optimized for IGBT's
| |
|
Negative Gate Drive Capability
| |
|
Cost Effectively Drives Power MOSFETs and Bipolar Transistors
| |
|
Pb-Free Packages are Available
|
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