随机存储器芯片MR0A08BYS35缓存芯片内存IC

　　FEATURES

　　· 3.3 Volt power supply

　　· Fast 35 ns read/write cycle

　　· SRAM compatible timing

　　· Native non-volatility

　　· Unlimited read & write endurance

　　· Data always non-volatile for >20 years at temperature

　　· Commercial and industrial temperatures

　　· All products meet MSL-3 moisture sensitivity level

　　· RoHS-Compliant TSOP2 and BGA packages

　　INTRODUCTION

　　The MR0A08B is a 1,048,576-bitmagnetoresistive random access memory (MRAM) device organized as 131,072 wordsof 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing withunlimited endurance.

　　Data is always non-volatile for greaterthan 20-years. Data is automatically protected on power loss by low-voltage inhibitcircuitry to prevent writes with voltage out of specification.

　　The MR0A08B is the ideal memory solutionfor applications that must permanently store and retrieve critical data andprograms quickly.

　　The MR0A08B is available in small footprint400-mil, 44-lead plastic small-outline TSOP type-2 package, 8 mm x 8 mm, or a48-pin ball grid array (BGA) package with 0.75 mm ball centers. (The 32-SOICpackage options is obsolete and no longer available for new orders.)

　　These packages are compatible with similarlow-power SRAM products and other non-volatile RAM products.

　　The MR0A08B provides highly reliable datastorage over a wide range of temperatures. The product is offered withcommercial temperature range (0 to +70 °C) and industrial temperature range (-40to +85 °C).