MR25H10MDFR芯片存储器串口mram

　　INTRODUCTION

　　The MR25H10 is a 1,048,576-bitmagnetoresistive random access memory (MRAM) device organized as 131,072 wordsof 8 bits. The MR25H10 offers serial EEPROM and serial Flash compatibleread/write timing with no write delays and unlimited read/write endurance.

　　Unlike other serial memories, both readsand writes can occur randomly in memory with no delay between writes. TheMR25H10 is the ideal memory solution for applications that must store andretrieve data and programs quickly using a small number of I/O pins.

　　The MR25H10 is available in either a 5 mm x6 mm 8-pin DFN package or a 5 mm x 6 mm 8-pin DFN Small Flag package. Both arecompatible with serial EEPROM, Flash, and FeRAM products.

　　TheMR25H10 provides highly reliable data storage over a wide range oftemperatures. The product is offered with Industrial (-40° to +85 °C) andAEC-Q100 Grade 1 (-40°C to +125 °C) operating temperature range options.