联系人：蔡晓菲
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电话：13751192923
地址： 中国 广东 深圳市西乡大道782号万骏汇1426室
容量SRAM存储器 CY7C1061GE18-15ZXI
RAM (Random Access Memory随机存贮器）是指通过指令可以随机地、个别地对每个存储单元进行访问、访问所需时间基本固定、且与存储单元地址无关的可以读写的存储器。几乎所有的计算机系统和智能电子产品中，都是采用RAM作为主存。而SRAM属于ram中较为典型的存储芯片类型，适用于纽扣电池供电的高速和超低功耗的应用,如手持式扫描仪、掌上电脑、多功能蜂窝电话、机顶盒和WLAN等。
| Part number | Density | Org. | Speed (ns) | Max. Operating VCCQ (V) | Max. Operating Voltage (V) | Min. Operating VCCQ (V) | Min. Operating Voltage (V) | Package |
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| CY7C1061GE30-10BVJXIT | 16Mb | 1M x 16 | 10 | 3.6 | 3.6 | 2.2 | 2.2 | BGA |
| CY7C10612GN30-10ZSXI | 16Mb | 1M x 16 | 10 | 3.6 | 3.6 | 2.2 | 2.2 | TSOP II |
| CY7C1061GE18-15BVJXI | 16Mb | 1M x 16 | 15 | 2.2 | 2.2 | 1.65 | 1.65 | BGA |
| CY7C1061GN18-15ZSXIT | 16Mb | 1M x 16 | 15 | 2.2 | 2.2 | 1.65 | 1.65 | TSOP |
| CY7C10612G30-10ZSXIT | 16Mb | 1M x 16 | 10 | 3.6 | 3.6 | 2.2 | 2.2 | TSOP II |
| CY7C1061GE30-10ZSXI | 16Mb | 1M x 16 | 10 | 3.6 | 3.6 | 2.2 | 2.2 | TSOP II |
| CY7C1061GE-10ZSXIT | 16Mb | 1M x 16 | 10 | 5.5 | 5.5 | 4.5 | 4.5 | TSOP II |
| CY7C1061GE18-15BV1XIT | 16Mb | 1M x 16 | 15 | 2.2 | 2.2 | 1.65 | 1.65 | BGA |
| CY7C1061GE18-15ZSXI | 16Mb | 1M x 16 | 15 | 2.2 | 2.2 | 1.65 | 1.65 | TSOP II |
| CY7C1061G-10BVXI | 16Mb | 1M x 16 | 10 | 5.5 | 5.5 | 4.5 | 4.5 | BGA |
| CY7C1061GE30-10BVXIT | 16Mb | 1M x 16 | 10 | 3.6 | 3.6 | 2.2 | 2.2 | BGA |
| CY7C1061G18-15ZSXI | 16Mb | 1M x 16 | 15 | 2.2 | 2.2 | 1.65 | 1.65 | TSOP II |
| CY7S1061G30-10BVXI | 16Mb | 1M x 16 | 10 | 3.6 | 3.6 | 2.2 | 2.2 | BGA |
| CY7S1061GE-10ZXI | 16Mb | 1M x 16 | 10 | 5.5 | 5.5 | 4.5 | 4.5 | TSOP I |
| CY7C1061GE18-15ZXI | 16Mb | 1M x 16 | 15 | 2.2 | 2.2 | 1.65 | 1.65 | TSOP I |
| CY7C1061GE30-10BV1XIT | 16Mb | 1M x 16 | 10 | 3.6 | 3.6 | 2.2 | 2.2 | BGA |
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