everspin代理商原厂现货MR2A16AYS35磁性随机存取存储器并口mram

　　FEATURE

　　· Fast 35 ns Read/Write cycle

　　· SRAM compatible timing, uses existing SRAM control-lers without redesign

　　· Unlimited Read & Write endurance

　　· Data non-volatile for >20 years at temperature

　　· One memory replaces Flash, SRAM, EEPROM and BBSRAM in a system for simpler, more efficient design

　　· Replaces battery-backed SRAM solutions with MRAM to improve reliability

　　· 3.3 volt power supply

　　· Automatic data protection on power loss

　　· Commercial, Industrial, Extended temperatures

　　· AEC-Q100 Grade 1 option

　　· All products meet MSL-3 moisture sensitivity level

　　· RoHS-compliant SRAM TSOP2 and BGA Packages

　　INTRODUCTION

　　The MR2A16A is a 4,194,304-bit magnetoresistiverandom access memory (MRAM) device orga- nized as 262,144 words of 16 bits. TheMR2A16A offers SRAM compatible 35 ns read/write timing with unlimitedendurance. Data is always non-volatile for greater than 20 years. Data isautomati- cally protected on power loss by low-voltage inhibit circuitry toprevent writes with voltage out of specification.

　　The MR2A16A is the ideal memory solutionfor applications that must permanently store and re- trieve critical data andprograms quickly.

　　The M2A16A is available in a smallfootprint 48-pin ball grid array (BGA) package and a 44-pin thin small outlinepackage (TSOP Type 2). These packages are compatible with similar low-powerSRAM products and other nonvolatile RAM products.

　　The MR2A16A provides highly reliable datastorage over a wide range of temperatures. The prod- uct is offered withCommercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105°C), and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range options.