硒化镓晶体百分之99.995 2H-GaSe(Gallium Selenide)

　　硒化镓晶体 2H-GaSe(Gallium Selenide)

　　晶体尺寸：10毫米

　　电学性能：半导体

　　晶体结构：六边形

　　晶胞参数：a = b = 0.374 nm, c = 1.592 nm, α = β = 90°, γ =120°

　　晶体类型：合成

　　晶体纯度：＞99.995%

　　X-ray diffraction on a GaSe single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (001) with h = 4, 6, 8, 10, 12

　　Powder X-ray diffraction (XRD) of a single crystal GaSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

　　Stoichiometric analysis of a single crystal GaSe by Energy-dispersive X-ray spectroscopy (EDX).

　　Raman spectrum of a single crystal GaSe. Measurement was performed with a 785 nm Raman system at room temperature.